MODEL | MANUFACTURER | DESCRIPTION |
AD9361BBCZ | Analog Devices | A high-performance, highly integrated RF transceiver designed for wireless communication applications |
ADRV9009BBCZ | Analog Devices | A highly integrated, wideband RF transceiver designed for wireless communication applications |
HMC8205BF10 | Analog Devices | The HMC8205BF10 is a gallium nitride (GaN) broadband power amplifier delivering 45.5 dBm (35 W) with 38% power added efficiency (PAE) across an instantaneous bandwidth of 0.3 GHz to 6 GHz. |
ADAR1000ACCZN | Analog Devices | A 4-channel, X-band beamforming IC designed for phased array radar applications |
CMPA2560025F | Cree (Wolfspeed) | A high-performance, GaN HEMT transistor designed for RF and microwave applications |
AD8362ARUZ | Analog Devices | A high-performance, wideband RMS power detector designed for RF and microwave applications |
CMPA0060025F | Cree (Wolfspeed) | A high-performance, GaN HEMT transistor designed for RF and microwave applications |
HMC424ALP3E | Analog Devices | The HMC424ALP3E is a broadband, 6-bit, gallium arsenide (GaAs), digital attenuator in low cost, leadless surface-mount package with a 31.5 dB attenuation control range in 0.5 dB steps. |
CMPA601C025F | Cree (Wolfspeed) | A high-performance, GaN HEMT transistor designed for RF and microwave applications |
HMC-ALH369 | Analog Devices | The HMC-ALH369 is a GaAs MMIC HEMT three stage, self-biased Low Noise Amplifier die which operates between 24 and 40 GHz. |
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