MODEL | MANUFACTURER | DESCRIPTION |
ULN2803ADWR | Texas Instruments | This product is RoHS Compliant with RoHS Directive 2011/65/EU and as amended by Directive 2015/863, and without material exemptions. |
MMBT3904LT1G | ON Semiconductor | A high-performance, NPN bipolar junction transistor designed for general-purpose applications |
IRFP4668PBF | ON Semiconductor | A high-performance, N-channel MOSFET designed for power switching applications |
ULN2803ADW | Texas Instruments | This product is RoHS Compliant with RoHS Directive 2011/65/EU and as amended by Directive 2015/863, and without material exemptions. |
MBR0520LT1G | ON Semiconductor | A high-performance, Schottky diode designed for power rectification applications. |
BSS138LT1G | ON Semiconductor | A high-performance, N-channel MOSFET designed for general-purpose applications. |
FDC5614P | ON Semiconductor | A high-performance, P-channel MOSFET designed for power switching applications |
SG2003J | ON Semiconductor | high-performance, NPN bipolar junction transistor designed for general-purpose applications |
FDG6332C | ON Semiconductor | A high-performance, dual N-channel MOSFET designed for power switching applications |
CGHV96100F2 | Cree (Wolfspeed) | A high-performance, GaN HEMT transistor designed for RF and microwave applications |
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